View RJH65D27BDPQ-A0_9063327.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

r07ds1328ej0110 rev.1.10 page 1 of 10 mar 01, 2016 preliminary datasheet RJH65D27BDPQ-A0 650v - 50a - igbt application: inverter features ? low collector to emitter saturation voltage v ce(sat) = 1.3 v typ. (at i c = 50 a, v ge = 15 v, ta = 25c) ? built in fast recovery diode in one package ? trench gate and thin wafer technology ? high speed switching t f = 120 ns typ. (at cc = 400 v, v ge = 15 v, i c = 50 a, rg = 10 ? , inductive load) ? operation frequency (10khz f ? 20khz) outline 1. gate 2. collecto r 3. emitter 4. collecto r c g e 1 2 3 4 renesas package code: prss0003zh-a (package name: to-247a) absolute maximum ratings (tc = 25c) item symbol ratings unit collector to emitter voltage / diode reverse voltage v ces / v r 650 v gate to emitter voltage v ges 30 v collector current tc = 25c i c 100 a tc = 100c i c 50 a collector peak current ic(peak) note1 200 a clamped inductive load current i cl note2 150 a collector to emitter diode forward current tc = 25c i df 100 a tc = 100c i df 50 a collector to emitter diode forward peak current i df (peak) note1 200 a collector dissipation p c note3 375 w junction to case the rmal resistance (igbt) j-c note3 0.40 c /w junction to case thermal resistance (diode) j-cd note3 0.50 c /w junction temperature tj note3 175 c storage temperature tstg ?55 to +150 c note: continuous heavy condition (e.g. high temperature/volt age/current or high variation of temperature) may affect a reliability even if it are within the absolute maximu m ratings. please consider derating condition for appropriate reliability in reference renesas semiconductor reliability handbook (recommendation for handling and usage of semiconductor devices) and individual reliability data. r07ds1328ej0110 rev.1.10 mar 01, 2016
RJH65D27BDPQ-A0 preliminary r07ds1328ej0110 rev.1.10 page 2 of 10 mar 01, 2016 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions zero gate voltage collector current / diode reverse current i ces / i r ? ? 100 ? a v ce = 650 v, v ge = 0 gate to emitter leak current i ges ? ? 1 ? a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 4.5 ? 6.5 v v ce = 10 v, i c = 1 ma collector to emitter saturation voltage v ce(sat) ? 1.3 1.65 v i c = 50 a, v ge = 15 v note4 input capacitance cies ? 2850 ? pf v ce = 25 v v ge = 0 f = 1 mhz output capacitance coes ? 175 ? pf reverse transfer capacitance cres ? 80 ? pf total gate charge qg ? 175 ? nc v ge = 15v v ce = 400 v i c = 50 a gate to emitter charge qge ? 25 ? nc gate to collector charge qgc ? 90 ? nc turn-on delay time t d(on) ? 20 ? ns v cc = 400 v v ge = ? 15 v i c = 50 a rg = 10 ?? (inductive load) note5 ? rise time t r ? 35 ? ns turn-off delay time t d(off) ? 165 ? ns fall time t f ? 120 ? ns turn-on energy e on ? 1.0 ? mj turn-off energy e off ? 1.5 ? mj total switching energy e total ? 2.5 ? mj turn-on delay time t d(on) ? 20 ? ns v cc = 400 v v ge = ? 15 v i c = 50 a rg = 10 ?? t c = 150 ? c ? (inductive load) note5 rise time t r ? 35 ? ns turn-off delay time t d(off) ? 200 ? ns fall time t f ? 140 ? ns turn-on energy e on ? 1.5 ? mj turn-off energy e off ? 1.9 ? mj total switching energy e total ? 3.4 ? mj short circuit withstand time t sc 3 ? ? ? s v cc ? 360 v, v ge = 15 v t c = 150 ? c frd forward voltage v f ? 1.7 2.2 v i f = 50 a note4 frd reverse recovery time t rr ? 80 ? ns i f = 50 a, di f /dt = 300 a/ ? s frd reverse recovery charge q rr ? 0.35 ? c frd peak reverse recovery current i rr ? 7.5 ? a notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. vge = 15v 3. please use this device in the therma l conditions which the junction temperature does not exceed 175c renesas igbt application note is disclosed about reliability test and application condition up to 175c 4. pulse test 5. switching time test circuit and waveform are shown below.
RJH65D27BDPQ-A0 preliminary r07ds1328ej0110 rev.1.10 page 3 of 10 mar 01, 2016 main characteristics typical output characteristics 200 160 120 80 40 246810 collector current i c (a) 0 0 collector to emitter voltage v ce (v) v ge = 8 v 9 v 13 v 15 v 10 v 11 v 12 v pulse test tc = 2 5 c typical output characteristics collector current i c (a) collector to emitter voltage v ce (v) 200 160 120 80 40 246810 0 0 pulse test tc = 150 c v ge = 8 v 9 v 13 v 15 v 10 v 11 v 12 v 400 300 200 100 0 collector current i c (a) case temperature tc (c) maximum dc collector current vs. case temperature 120 80 60 40 20 0 0 25 50 100 75 125 150 175 0 25 50 100 75 125 150 175 collector dissipation pc (w) case temperature tc (c) collector dissipation vs. case temperature 100 collector current i c (a) collector to emitter voltage v ce (v) maximum safe operation area 1000 100 1 0.1 10 0.01 1 100 10 1000 collector current i c (a) collector to emitter voltage v ce (v) turn-off soa 0 200 400 600 800 180 150 120 90 60 30 0 tc = 25 c single pulse 100 s pw = 10 s
RJH65D27BDPQ-A0 preliminary r07ds1328ej0110 rev.1.10 page 4 of 10 mar 01, 2016 10 8 6 4 2 0 gate to emitter cutoff voltage vs. case temparature (typical) ? 25 0 25 75 125 50 100 150 gate to emitter cutoff voltage v ge(off) (v) v ce = 10 v pulse test case temparature tc (c) 1.5 ma i c = 10 ma 3.0 2.0 1.0 2.5 1.5 0.5 0 ? 25 0 25 75 125 50 100 150 50 a 25 a i c = 100 a v ge = 15 v pulse test collector to emitter saturation voltage vs. case temparature (typical) collector to emitter saturation voltage v ce(sat) (v) case temparature tc ( c) typical transfer characteristics collector current i c (a) gate to emitter voltage v ge (v) 0 0 4 8 12 20 16 200 160 120 80 40 v ce = 10 v pulse test tc = 2 5 c 150 c collector to emitter saturation voltage vs. gate to emitter voltage (typical) collector to emitter saturation voltage v ce(sat) (v) gate to emitter voltage v ge (v) 5 4 3 2 0 4 8 12 20 16 1 i c = 50 a 25 a 12.5 a tc = 2 5 c pulse test collector to emitter saturation voltage vs. gate to emitter voltage (typical) collector to emitter saturation voltage v ce(sat) (v) gate to emitter voltage v ge (v) 5 4 3 2 0 4812 20 16 1 i c = 50 a 25 a 12.5 a tc = 150 c pulse test frequency characteristics (typical) collector current i c(max) (a) frequency f (khz) 150 120 90 60 30 0 1 10 100 tj = 175c tc = 90c v ce = 400 v v ge = 15 v rg = 10 duty = 50% 0 collector current wave (square wave) ic(max)
RJH65D27BDPQ-A0 preliminary r07ds1328ej0110 rev.1.10 page 5 of 10 mar 01, 2016 1 10 100 1 10 0.1 100 1000 10 switching characteristics (typical) (3) gate registance rg ( ) (inductive load) switching characteristics (typical) (4) gate registance rg ( ) (inductive load) eoff eon v cc = 400 v, v ge = 15 v i c = 50 a, tc = 150 c swithing energy losses e (mj) switching times t (ns) 1 10 100 1000 0.1 1 100 10 swithing energy losses e (mj) 1 10 100 1000 1 10 100 collector current i c (a) (inductive load) 1 10 100 1000 switching characteristics (typical) (1) switching characteristics (typical) (2) collector current i c (a) (inductive load) switching times t (ns) 10 100 1000 50 25 150 75 125 100 switching characteristics (typical) (5) t d(on) case temperature tc (c) (inductive load) switching times t (ns) v cc = 400 v, v ge = 15 v i c = 50 a, rg = 10 t f t d(off) t r 0.1 1 10 50 25 150 75 125 100 case temperature tc (c) (inductive load) switching characteristics (typical) (6) eoff eon swithing energy losses e (mj) v cc = 400 v, v ge = 15 v i c = 50 a, rg = 10 v cc = 400 v, v ge = 15 v i c = 50 a, tc = 150 c t d(off) t r t f t d(on) v cc = 400 v, v ge = 15 v rg = 10 , tc = 150 c eoff eon v cc = 400 v, v ge = 15 v rg = 10 , tc = 150 c t d(off) t d(on) t f t r
RJH65D27BDPQ-A0 preliminary r07ds1328ej0110 rev.1.10 page 6 of 10 mar 01, 2016 reverse recovery current i rr (a) reverse recovery charge q rr ( c) diode current slope di f /dt (a/ s) reverse recovery time t rr (ns) reverse recovery time vs. diode current slope (typical) 1000 100 10 10 100 1000 v cc = 400 v i f = 50 a 10 1000 100 0.1 1 10 diode current slope di f /dt (a/ s) reverse recovery charge q rr ( c) reverse recovery charge vs. diode current slope (typical) 0.01 10 1000 100 diode current slope di f /dt (a/ s) reverse recovery current i rr (a) reverse recovery current vs. diode current slope (typical) 10 100 1 tc = 150 c 25 c forward current i f (a) reverse recovery time t rr (ns) reverse recovery time vs. forward current (typical) 1000 100 10 10 100 1000 tc = 150 c 25 c forward current i f (a) reverse recovery charge vs. forward current (typical) 10 1 0.1 10 100 1000 v cc = 400 v di f /dt = 300 a/us tc = 150 c 25 c forward current i f (a) reverse recovery current vs. forward current (typical) 100 10 1 10 100 1000 v cc = 400 v di f /dt = 300 a/us tc = 150 c 25 c v cc = 400 v i f = 50 a tc = 150 c 25 c v cc = 400 v i f = 50 a tc = 150 c 25 c v cc = 400 v di f /dt = 300 a/us
RJH65D27BDPQ-A0 preliminary r07ds1328ej0110 rev.1.10 page 7 of 10 mar 01, 2016 capacitance c (pf) 10 100 1000 10000 0 100 50 150 200 250 300 cies coes cres gate charge qg (nc) dynamic input characteristics (typical) typical capacitance vs. collector to emitter voltage 800 600 400 200 0 0 16 12 8 4 0 40 80 120 160 200 v ge v ce v ge = 0 v f = 1 mhz tc = 25 c collector to emitter voltage v ce (v) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) v cc = 400 v i c = 50 a tc = 25 c forward current i f (a) c-e diode forward voltage v cef (v) forward current vs. forward voltage (typical) 01234 200 160 120 80 40 0 tc = 2 5 c 150 c v ce = 0 v pulse test
RJH65D27BDPQ-A0 preliminary r07ds1328ej0110 rev.1.10 page 8 of 10 mar 01, 2016 0.01 1 0.1 10 10 100 1 m 10 m 100 m 10 1 0.05 0.2 0.1 0.5 d = 1 tc = 25 c 0.01 0.02 1 shot pulse 0.01 1 0.1 10 10 100 1 m 10 m 100 m 10 1 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 0.50 c/w, tc = 25 c 0.05 0.2 0.1 0.5 d = 1 tc = 25 c pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (igbt) pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (diode) p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 0.40 c/w, tc = 25 c 0.01 0.02 1 shot pulse
RJH65D27BDPQ-A0 preliminary r07ds1328ej0110 rev.1.10 page 9 of 10 mar 01, 2016 switching time test circuit diode reverse recovery time test circuit waveform waveform diode clamp d.u.t d.u.t rg l v cc v cc t rr i rr di f /dt 0.9 i rr i f i f rg 0.5 i rr l 0 t d(off) t d(on) t f t r 90% 90% 90% 10% 10% 10% v ge i c
RJH65D27BDPQ-A0 preliminary r07ds1328ej0110 rev.1.10 page 10 of 10 mar 01, 2016 package dimension 15.94 0.19 5.45 6.15 21.13 0.33 20.19 0.38 4.5 max ? 3.60 0.1 1.27 0.13 5.45 2.41 0.71 0.1 5.02 0.19 unit: mm ? ? ordering information orderable part no. quantity shipping container RJH65D27BDPQ-A0#t2 240 pcs box (tube)
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics do es not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property right s of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". the recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat t o human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you must check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics, e specially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas e lectronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have spec ific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatib ility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or otherwis e places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesas e lectronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this documen t or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-owned subs idiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. http://www.renesas.com refer to "http://www.renesas.com/" for the latest and detailed information. renesas electronics america inc. 2801 scott boulevard santa clara, ca 95050-2549, u.s.a. tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 9251 yonge street, suite 8309 richmond hill, ontario canada l4c 9t3 tel: +1-905-237-2004 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-6503-0, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. room 1709, quantum plaza, no.27 zhichunlu haidian district, beijing 100191, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 301, tower a, central towers, 555 langao road, putuo district, shanghai, p. r. china 200333 tel: +86-21-2226-0888, fax: +86-21-2226-0999 renesas electronics hong kong limited unit 1601-1611, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2265-6688, fax: +852 2886-9022 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei 10543, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 80 bendemeer road, unit #06-02 hyflux innovation centre, singapore 339949 tel: +65-6213-0200, fax: +65-6213-0300 renesas electronics malaysia sdn.bhd. unit 1207, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics india pvt. ltd. no.777c, 100 feet road, hal ii stage, indiranagar, bangalore, india tel: +91-80-67208700, fax: +91-80-67208777 renesas electronics korea co., ltd. 12f., 234 teheran-ro, gangnam-gu, seoul, 135-080, korea tel: +82-2-558-3737, fax: +82-2-558-5141 sales offices ? 2016 renesas electronics corporation. all rights reserved. colophon 5.0

▲Up To Search▲

Price & Availability of RJH65D27BDPQ-A0

	To Download RJH65D27BDPQ-A0 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .